2SD882 / D882 Transistor

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US $0.03-0.036 / Pieces | 1000 Piece/Pieces (Min. Order)
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Overview
Quick Details
Place of Origin:
China (Mainland)
Brand Name:
Made in china
Model Number:
D882 Transistor
Type:
Triode Transistor
Package Type:
TO-126
SupplyAbility
SupplyAbility:
1000000 Piece/Pieces per Day
Packaging & Delivery
Packaging Details
DIP
Port
shenzhen
Lead Time :
3 days

2SD882 / D882 Transistor

 

 FEATURES
Power dissipation

 


MAXIMUM RATINGS (TA=25°C unless otherwise noted)

 Symbol   Parameter   Value   Units  
 VCBO   Collector-Base Voltage   40   V  
 VCEO   Collector-Emitter Voltage   30   V  
 VEBO   Emitter-Base Voltage   6   V  
 IC   Collector Current -Continuous   3   A  
 PD   Collector Power Dissipation   1.25   W  
 TJ   Junction Temperature   150   °C 
 Tstg   Storage Temperature   -55-150   °C 

 

 ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)

 Parameter   Symbol    Test  conditions MIN   TYP   MAX   UNIT  
 Collector-base breakdown voltage   V(BR)CBO   IC = 100μA, IE=0   40     V  
 Collector-emitter breakdown voltage   V(BR)CEO   IC = 10mA, IB=0   30     V  
 Emitter-base breakdown voltage   V(BR)EBO   IE= 100μA, IC=0   5     V  
 Collector cut-off current   ICBO   VCB= 40 V, IE=0     1   μA  
 Collector cut-off current   ICEO   VCE= 30 V, IB=0     10   μA  
 Emitter cut-off current   IEBO   VEB= 6 V, IC=0     1   μA  
 DC current gain   hFE   VCE= 2 V, IC= 1A   60    400   
 Collector-emitter saturation voltage   VCE (sat)   IC= 2A, IB= 0.2 A     0.5   V  
 Base-emitter saturation voltage   VBE (sat)   IC= 2A, IB= 0.2 A     1.5   V  
 Transition frequency   fT   VCE= 5V, IC=0.1A f =10MHz    90    MHz  

 

CLASSIFICATION OF hFE

 Rank   R   O   Y   GR  
 Range   60-120   100-200   160-320   200-400